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Industry’s Most Accurate 3D Hall-Effect Position Sensor Provides Speed And Precision For Faster Real-Time Control

Texas Instruments (TI) (Nasdaq: TXN) introduced the industry’s most accurate 3D Hall-effect position sensor. With the TMAG5170, engineers can achieve uncalibrated ultra-high precision at speeds up to 20 kSPS for faster and more accurate real-time control in factory automation and motor-drive applications. The sensor also provides integrated functions and diagnostics to maximize design flexibility and system safety, while using at least 70% less power than comparable devices. The TMAG5170 is the first device in a new family of 3D Hall-effect position sensors that will meet a wide range of industrial needs – from ultra-high performance to general purpose. For more…
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TI’s Integrated Transformer Module Technology Helps Maximize Drive Time In Hybrid And Electric Vehicles

Texas Instruments (TI) (Nasdaq: TXN) introduced the industry’s smallest and most accurate 1.5-W isolated DC/DC bias-supply module. The UCC14240-Q1 uses a proprietary integrated transformer technology to enable designers to cut their power solution size in half for use in high-voltage environments such as electric vehicles (EVs), hybrid EVs, motor-drive systems and grid-tied inverters. For more information, see ti.com/UCC14240-Q1-pr. With the accelerating growth of the EV market, automotive design engineers are looking for ways to improve efficiency and reliability, while also reducing the weight of the heaviest part of the EV: the powertrain. To help meet the need for smaller, more…
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TI Introduces Industry’s First Automotive GaN FET With Integrated Driver, Protection And Active Power Management

Texas Instruments (TI) expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers deliver twice the power density, achieve 99% efficiency and reduce the size of power magnetics by 59% compared to existing solutions. TI developed these new FETs using its proprietary GaN materials and processing capabilities on a GaN-on-silicon (Si) substrate, providing a cost and supply-chain advantage over comparable substrate materials such as silicon carbide (SiC). For more information,…
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